| PART |
Description |
Maker |
| MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| HFM306 HFM308 HFM301 HFM305 |
SMD, High Efficient Rectifier, 600V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 1000V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 50V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 400V, 3A, Silicon Diode
|
Rectron Semiconductor
|
| BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| NCP1605 NCP1605DR2G |
Enhanced, High Voltage and Efficient Standby Mode, Power Factor Controller
|
ON Semiconductor
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| HER508 |
HIGH EFFICIENT
|
EIC discrete Semiconductors
|
| HER30105 |
HIGH EFFICIENT
|
EIC discrete Semiconductors
|
| HER3001PT HER3002PT |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| US1M US1F |
High Efficient Rectifier
|
Yangzhou yangjie electronic co., ltd
|
| AUBYD57ZH |
High Efficient Rectifier
|
Zowie Technology Corpor...
|
| HS2K |
High Efficient Rectifier
|
Yangzhou yangjie electronic co., ltd
|
| EGC20MH EGC20GH EGC20KH EGC20DH EGC20JH |
High Efficient Rectifier
|
Zowie Technology Corporation
|
